Research, review, and buy 120gb Sata 850 Evo 2.5in Discontinued Product Replacement - May Not Be In Retail Packaging. Samsung MZ-75E120B/AM MZ75E120BAM is available for $161.19. More information on this item is available below. Click the button below for details and specifications.
Samsung MZ-75E120B/AM mz75e120bam 120gb Sata 850 Evo 2.5in Discontinued Product Replacement - May Not Be In Retail Packaging
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What is 3D V-NAND and how does it differ from existing technology?
Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utilising a smaller footprint.
Optimise daily computing with TurboWrite technology for unrivalled read/write speeds.
Achieve the ultimate read/write performance to maximise your everyday computing experience with Samsung’s TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO* but up to 1.9x faster random write speeds for 120/250 GB models** as well. The 850EVO delivers the top of its class performance in sequential read (540 MB/s) and write (520 MB/s) speeds. Plus, you also gain optimised random performance in all QD for client PC usage scenario.
* PCmark7(250 GB ) : 6,700(840 EVO) > 7,600(850 EVO).
** Random Write(QD32,120 GB) : 36,000 IOPS(840 EVO) > 88,000 IOPS(850 EVO).
Get into the fast lane with the improved RAPID mode.
Samsung’s Magician software which provides Rapid Mode for 2x faster processing data speeds* on a system level by utilising unused PC memory (DRAM) as cache storage. The newest Magician increased the maximum memory usage in Rapid mode from 1 GB, in the previous 840 EVO version, to up to 4 GB with the 850 EVO when implementing 16 GB of DRAM. You also get a 2x performance* boost in all random Queue depth.
* PCMARK7 RAW(250 GB) : 7,500 > 15,000(Rapid mode).
Guaranteed endurance and reliability bolstered by 3D V-NAND technology.
The 850 EVO delivers guaranteed endurance and reliability by doubling the TBW* compared to the previous generation 840 EVO** backed by an industry leading 5 year warranty. The 850 EVO through minimised performance degradation allows sustained performance improvements of up to 30% over the 840 EVO proving to be one of the most dependable storage devices***.
* TBW : Total Bytes Written.
** TBW : 43(840 EVO) > 75(850 EVO 120/250 GB),150(850 EVO 500/1 TB).
*** Sustained Performance(250 GB) : 3,300 IOPS(840 EVO) > 6,500 IOPS(850 EVO), Performance measured after 12 hours “Random Write” test.
Compute longer with improved energy efficiency backed by 3D V-NAND.
The 850 EVO delivers significantly longer battery life on your notebook with a controller optimised for 3D V-NAND now enabling Device Sleep at a highly efficient 2mW. The 850 EVO is now 25% more power efficient to the 840 EVO during write operations* thanks to 3D V-NAND only consuming half the energy than that of Planar 2D NAND.
* Power(250 GB) : 3.2 Watt(840 EVO) > 2.4 Watt(850 EVO).
Secure valuable data through advanced AES 256 encryption.
The 850 EVO comes fortified with the latest hardware-based full disk encryption engine. The AES 256 encryption-bit security technology secures data without any performance degradation and complies with TCG Opal 2.0. It is also compatible with Microsoft e-drive IEEE1667 so your data is protected at all times for your peace of mind.
Protect against overheating with a highly responsive Dynamic Thermal Guard.
The 850 EVO’s Dynamic Thermal Guard constantly monitors and maintains ideal temperatures for the drive to operate in optimal conditions for the integrity of your data. When temperatures rise above an optimal threshold, the Thermal Guard automatically throttles temperatures down protecting your data while maintaining responsiveness to ensure your computer is always safe from overheating.
Level up to the 850 EVO simply without any hassle.
In three simple steps the Samsung’s One-stop Install Navigator software easily allows you to migrate all the data and applications from the existing primary storage to the 850 EVO. The Samsung Magician software also allows you to optimise and manage your system best suited for your SSD.
Acquire an integrated in-house solution consisting of top-quality components.
Samsung is the only SSD brand to design and manufacture all its components in-house allowing complete optimised integration. The result – enhanced performance, lower power consumption with an up to 1 GB LPDDR2 DRAM cache memory and improved energy-efficiency with the MEX/MGX controller.
|BLT Item #:||B4W9115|
|Mfg. Part #:||MZ-75E120B/AM|
|Description:||120GB SATA 850 EVO 2.5IN DISCONTINUED PRODUCT REPLACEMENT - MAY NOT BE IN RETAIL PACKAGING (ORDERED AS NEEDED FROM MFG)|
|Suggested Retail Price:||$191.49|
|Dimensions:||5.75" x 5.75" x 0.1"|
|Return Policy:||Standard BLT Return Policy|
|Brand and Item Information|
|Name:||Samsung 850 Evo 120GB 2.5" Serial ATA III|
|Brief Description:||Samsung 850 Evo, 120 GB, 2.5", Serial ATA III, 540 MB/s, 6 Gbit/s|
|Expanded Description:||Samsung 850 Evo. Solid-state drive capacity: 120 GB. SSD form factor: 2.5". Solid-state drive interface: Serial ATA III, Read speed: 540 MB/s, Write speed: 520 MB/s, Data transfer rate: 6 Gbit/s|
|Windows operating systems supported:||Y|
|Weight & Dimensions|
|Width:||2.75" (6.99 cm)|
|Depth:||3.94" (10.00 cm)|
|Height:||0.268" (6.8 mm)|
|Power consumption (read):||0.1 W|
|Power consumption (write):||0.1 W|
|Power consumption (idle):||0.045 W|
|Operating temperature (T-T):||0 - 70 °C|
|Storage temperature (T-T):||40 - 85 °C|
|Storage relative humidity (H-H):||5 - 95 %|
|Non-operating vibration:||20 G|
|Non-operating shock:||1500 G|
|SSD form factor:||2.5"|
|Color of product:||Black|
|Solid-state drive capacity:||120 GB|
|Solid-state drive interface:||Serial ATA III|
|Read speed:||540 MB/s|
|Write speed:||520 MB/s|
|Drive device, buffer size:||256 MB|
|Data transfer rate:||6 Gbit/s|
|Random read (4KB):||94000 IOPS|
|Random write (4KB):||36000 IOPS|
|Security algorithms:||256-bit AES|
|Mean time between failures (MTBF):||1500000 h|
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